Method of fabricating a solid state image sensing device

A process of manufacturing a solid state image sensing device, comprising the steps of:

• preparing a low-density n-type semiconductor substrate;
• forming a p-type semiconductor region in said low-density n-type semiconductor substrate;
• selectively forming a first n-type layer in said p-type semiconductor region;
• forming a first electrode on an insulating layer situated on said p-type semiconductor region;
• forming high-density second, third and fourth n-type layers in said p-type semiconductor region;
• forming a high-density p-type layer in said first n-type layer;
• defining contact windows to said third and fourth n-type layers;
• performing interconnection from the contact of said third n-type layer to the vicinity of said high-density p-type layer by a first connecting means having an insulating surface;
• defining a contact window in said high-density p-type layer;
• and
• performing interconnection from said first connecting means to the contact of said high-density p-type layer by a second connecting means of a low-resistance metal.