Multilayered electrophotographic photosensitive member

An electrophotographic photosensitive member comprising a conductive support and provided thereon in the following order, a barrier layer, a photoconductive layer made of amorphous silicon containing germanium and a surface layer, characterized in that

• an intermediate layer is formed between said photoconductive layer and said barrier layer and is made of amorphous silicon and has an intermediate optical gap value between those of said photoconductive layer and said barrier layer.

An electrophotographic photosensitive member comprising a conductive support and provided thereon in the following order, a barrier layer, a photoconductive layer made of amorphous silicon containing germanium and a surface layer, characterized in that

• a first intermediate layer is formed between said surface layer and said photoconductive layer and is made of amorphous silicon containing germanium and carbon and has an intermediate optical gap value between those of said photoconductive layer and said surface layer and a seocnd intermediate layer is formed between said photoconductive layer and said carrier layer and is made of amorphous silicon.

An electrophotographic photosensitive member comprising a conductive support and provided thereon in the following order, a barrier layer, a photoconductive layer and a surface layer, characterized in that

• said photoconductive layer has a triple-layer structure comprises of an upper layer made of amorphous silicon containing germanium and carbon, a middle layer made of amorphous silicon containing germanium, and a lower layer made of amorphous silicon, said upper layer having an intermediate optical gap value between those of said middle layer and said surface layer, and said lower layer having an intermediate optical gap value between those for said middle layer and said barrier layer.

An electrophotographic photosensitive membmer comprising a conductive support and provided thereon in the following order, a barrier layer, a photoconductive layer made of amorphous silicon containing germanium and a surface layer, characterized in that

• a first intermediate layer is formed between said surface layer and said photoconductive layer and is made of amorphous silicon containing germanium and carbon, said first intermediate layer having an intermediate optical gap value between the those or said photoconductive layer and said surface layer, and
• a second intermediate layer is formed between said photoconductive layer and said barrier layer and is made of amorphous silicon, said second intermediate layer having an intermediate optical gap value between those of said photoconductive layer and said barrier layer.