Power sensor for RF power measurements
AssigneeRohde & Schwarz GmbH & Co. KG
InventorsHans Delfs, Tilman Betz
Life of this patent
Estimating the term…
Abstract
In a power sensor for RF power measurments, comprising a thin-film absorbing resistor formed on the top surface of a support member and a thermocouple which is electrically isolated from the circuit of said absorbing resistor, the absorbing resistor is formed on an insulating film of a silicon support member so as to increase the sensitivity and to facilitate manufacture thereof, the silicon support member including an island formed beneath the absorbing resistor, a thermally conducting portion formed in spaced relationship thereto with a narrow bridge portion provided inbetween, and said thermocouple being constituted by the bridge portion and by mutually spaced contact zones formed thereon.
Claims6
A power sensor for RF-power measurements comprising:
- a silicon support member,
- an insulating film formed on a surface portion of said support member,
- a power absorbing resistor formed over said insulating film,
- an island portion formed beneath said power absorbing resistor,
- a heat sink portion in spaced relation to said island,
- a narrow bridge portion between said island and said heat sink portion, said island portion, heat sink portion and bridge portion all being integral with said silicon support member,
- a thermocouple electrically isolated from said resistor,
- said thermocouple being formed by said bridge portion, and contact zones on said bridge portion electrically connected to said thermocouple in spaced relation.
Dependencies are inferred from the claim text.