Dopant coated bead-like silicon particles
AssigneeEthyl Corporation
InventorsRobert H. Allen, Jameel Ibrahim
Life of this patent
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Abstract
Particles of silicon and a p or n carrier substance which are in spherical or spheroidal form, and suitable for use in the preparation of doped semiconductor devices, can be prepared by a fluidized bed technique for chemical vapor deposition of a carrier substance (B, P, As or Sb). The prepared products have a kernel of high purity polysilicon and a layer of silicon/dopant alloy upon the kernel. Optionally, the particles have a thin outer layer of silicon.
Claims11
A silicon composition in bead or bead-like particulate form characterized by having (i) a center portion of high purity silicon and (ii) a layer on said center portion, said layer having a p or n carrier substance.
A dopant alloy composition in free flowing particulate form consisting essentially of spherical or substantially spherical particles of a narrow size distribution and characterized by:
- (a) being comprised of,
- (b) an inner nucleus of essentially pure silicon, and
- (c) a relatively thin layer around said nucleus, and composed of high purity silicon alloyed with a p or n carrier type element selected from B, P, As, or Sb,
- said dopant alloy being suitable for batch or continuous Czochralski processes for preparing doped, single crystalline silicon.
A silicon composition in bead or bead-like form and characterized by having (i) a center portion of high purity silicon encapsulated within (ii) a relatively thin layer of an alloy of silicon with a p or n carrier element, and (iii) an outer coat of essentially pure silicon, said outer coat being substantially thinner than said thin layer of silicon alloy, said composition being further characterized by being suitable for use as a dopant alloy for batch or continuous Czochralski processes for preparing doped, single crystalline silicon.
Dependencies are inferred from the claim text.