Method for removing resist from semiconductor device
AssigneeFujitsu Limited
InventorsShuzo Fujimura, Yoshikazu Kato, Syouzi Mochizuki
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Abstract
A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process. This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.
Claims5
A method for removing a resist of a semiconductor device, comprising the steps of:
- removing said resist on a layer formed on a semiconductor substrate having a functional region, in a direction of the thickness thereof by a predetermined thickness by applying plasma processing;
- and
- removing the remaining resist by applying a chemical process.
Dependencies are inferred from the claim text.