Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
AssigneeDaidotokushuko Kabushikikaisha
InventorsMasayoshi Umeno, Shiro Sakai, Tetsuo Soga
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Abstract
A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.
Claims11
A superlattice crystal comprising a Si substrate layer, a GaAs layer and intermediate layer to absorb lattice mismatching between the Si substrate layer and the GaAs layer, the intermediate layer means comprising at least two differently-constituted superlattices, the constituent super lattice layers being those of sequentially-disposed and differently constituted superlattices which in combination absorb said lattice mismatching.
Dependencies are inferred from the claim text.