Dynamic type memory device including a reference potential generating circuit arrangement
AssigneeKabushiki Kaisha Toshiba
InventorYoshio Okada
Life of this patent
Estimating the term…
Abstract
A dynamic type memory device includes a plurality of one-transistor/one-capacitor type memory cells which are arranged in a matrix, first bit lines connected to the memory cells, second bit lines, and first capacitors respectively connected to the second bit lines and having a capacitance equal to 1/2 of that of the memory cell capacitor. This memory device further has second capacitors respectively connected to the second bit lines and having a capacitance equal to 1/2 of that of the memory cell capacitor, first switching transistors connected respectively between a power source terminal and the first capacitors, and second switching transistors connected respectively between a ground terminal and the second capacitors.
Claims6
A dynamic type memory device comprising:
- a plurality of memory cells each having one transistor and one capacitor;
- N first bit lines each of which is connected to the memory cells on the same column;
- N second bit lines;
- a plurality of word lines each of which is connected to the memory cells on the same row;
- a power source terminal to which a power source voltage is applied and a reference potential terminal which is kept at a reference potential;
- N first capacitors each having a first terminal directly connected to each of said second bit lines and a capacitance of 1/2 of each capacitor of said memory cells;
- N second capacitors each having a first terminal directly connected to each of the second bit lines and a capacitance of 1/2 of each capacitor of said memory cells;
- and
- potential setting means for connecting said power source terminal to said second bit lines through said first capacitors and also connecting said reference potential terminal to said second bit lines through said second capacitors to set the potentials of said second bit lines in a data readout mode.
Dependencies are inferred from the claim text.