Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• a semiconductor layer made of amorphous silicon formed over said substrate;
• a transparent conductive layer fromed on said semiconductor layer, said transparent conductive layer consisting of an interfacial reaction product of the amorphous silicon of said semionductor layer and a metallic film formed on said semiconductor layer;
• and
• a portion of said metallic film being disposed on said transparent conductive layer, said portion of said metallic film being patterned to selectively expose a predetermined surface portion of said transparent conductive layer so that only said predetermined surface portion of said transparent conductive layer provides an exposed surface that serves a light receiving window on which incident light directly impinges.

A semiconductor device comprising:

• (a) a substrate;
• (b) an amorphous silicon layer formed over said substrate.
• (c) a transport conductive layer formed on said amorphous silicon layer, said transparent conductive layer consisting of an interfacial reaction product of the amorphous silicon of said amorphous silicon layer and a metallic film formed thereon, said metallic film comprising at least one element selected from the group consisting of Cr, Mo, W, Ti, V, Zr, Nb, Ta, Hf, Ni, Pd, Co, Pt and Rh;
• and
• (d) a portion of said metallic film formed on said amorphous silicon layer remaining on said transparent conductive layer and being patterned to selectively expose a predetermined surface portion of said transparent conductive layer so that only said predetermined surface portion of said transparent conductive layer provides an exposed surface that serves as a light receiving window on which incident light directly impinges.

A semiconductor device comprising:

• (a) a substrate;
• (b) a semiconductor layer made of amorphou silicon formed on said substrate;
• (c) a metallic film formed on said semiconductor layer;
• (d) a transparent conductive layer interposed between said semiconductor layer and said metallic film, said transparent conductive layer consisting of an interfacial reaction product of the amorphous silicon of said semiconductor layer and metal material forming said metallic film;
• and
• (e) said metallic film being patterned to selectively expose a predetermined surface portion of said transparent conductive layer so that only said predetermined surface portion of said transparent conductive layer provides an exposed surface that serves as a light receiving window on which incident light directly impinges.