Method of producing an end surface light emission type semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKatsuhiko Goto, Shogo Takahashi, Etsuji Omura
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Abstract
A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the lower cladding layer at a predetermined position of the wafer to produce an output end surface; a process of depositing photosensitive material in the groove; a process of producing a required number of lenses from the photosensitive material; and a process of dividing the wafer into a plurality of lens-appended end surface light emission type semiconductor devices.
Claims1
A method of producing an end surface light emission type semiconductor device comprising:
- producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate;
- forming a stripe groove of a predetermined depth reaching said lower cladding layer at a predetermined position of the wafer thereby to produce an output end surface;
- depositing photosensitive material in said groove;
- producing a required number of lenses from said photosensitive material;
- and
- dividing said wafer into a plurality of lens-appended end surface light emission type semiconductor devices.
Dependencies are inferred from the claim text.