Etching solution for evaluating crystal faults

Abstract

An etching solution used for evaluating crystal defects in a silicon wafer is disclosed. The etching solution is characterized by consisting of acetic acid, hydrofluoric acid, nitric acid, silver nitrate, and copper nitrate, and is very advantageous in consideration of the operator's health, since it does not contain Cr.sup.6+. The etching solution has a sufficiently high etching rate and detection properties.

Dependencies are inferred from the claim text.