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US 4,787,691 AGranted
Electro-optical silicon devices
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsJoseph P. Lorenzo, Richard A. Soref
Life of this patent
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Abstract
All silicon electrooptic devices for modulating and switching of guided light have been developed using the silicon-on-insulator approach. Generally, p-n junctions are formed in a silicon waveguide to selectively modulate and direct light by carrier refraction. An electrooptic phase modulator and several 2.times.2 electrooptic switches are described. The devices are particularly useful for manipulating light signals in the 1.3-1.6 micron range.
Claims19
An electrooptic phase modulator comprising:
- (a) a silicon substrate;
- (b) an insulating dielectric layer positioned upon said silicon substrate;
- (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into a waveguide for the transmission of light;
- (d) a first doped region forming a part of said crystalline silicon layer adjacent to said waveguide;
- (e) a second doped region forming a part of said crystalline silicon layer adjacent to said waveguide and differently doped than said first doped region;
- (f) a passivating layer substantially covering said crystalline silicon layer;
- (g) a first electrical contact connected to said first doped region layer;
- and
- (h) a second electrical contact electrically connected to said second doped region wherein connection of said electrical contacts to an electric voltage source affects the phase of light transmitted through said waveguide.
6 more elements
An electrooptic switch comprising:
- (a) a silicon substrate;
- (b) a dielectric layer deposited upon said silicon substrate;
- (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region.
- (d) a passivating layer substantially covering said crystalline silicon layer;
- (e) a first contact electrically connected to said n-type region of said waveguide common area;
- and
- (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to direct light traveling through said waveguide common area.
4 more elements
The electrooptic switch of claim 9 wherein said dielectric layer is interrupted at a location removed from said waveguide in order to permit electric current flow between said substrate and said crystalline silicon layer.
An electrooptic switch comprising
- (a) a silicon substrate;
- (b) a dielectric layer deposited upon said silicon substrate;
- (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer comprising two dissimilary doped regions and two diverging waveguides having a common area;
- (d) a passivating layer substantially covering said crystalline silicon layer;
- (e) a first contact electrically connected to said waveguide common area;
- and
- (f) a second contact electrically connected to said crystalline silicon layer adjacent to said common area, said first and second electric contacts for providing a current through said switch in order to divide light traveling through said waveguide common area between said two diverging waveguides.
4 more elements
An electroptical switch comprising:
- (a) a substrate;
- (b) a first dielectric layer deposited on said substrate;
- (c) a first silicon layer deposited on said first dielectric layer, said first silicon layer forming a first waveguide for light transmission;
- (d) a second dielectric layer deposited on said first silicon layer for containing said first waveguide;
- (e) a second silicon layer deposited on said second dielectric layer, said second silicon layer forming a second waveguide for the transmission of light;
- (f) a passivating layer covering said second silicon
- (g) a crossover region wherein said second waveguide passes over said first waveguide and said second dielectric layer is deleted;
- (h) a doped p-type region positioned at said crossover region which is electrically connected to a contact;
- and
- (i) a waveguide contact for completing circuits between said doped p-type region and said first and second waveguides in order to direct the transfer of light therebetween.
7 more elements
An electrooptic switch comprising:
- (a) a silicon substrate;
- (b) a dielectric layer deposited upon said silicon substrate;
- (c) a crystalline silicon layer deposited upon said dielectric layer, said crystalline silicon layer formed into two diverging waveguides having a common area which comprises an n-type region and a p-type region, said p type region forming a variable mirror for selectively diverting optical signals;
- (d) a passivating layer substantially covering said crystalline silicon layer;
- (e) a first contact electrically covering said n-type region of said waveguide common area;
- and
- (f) a second contact electrically connected to said p-type region, said first and second electric contacts for providing an electric current through said switch in order to selectively divert light traveling through said waveguide common area.
4 more elements
Dependencies are inferred from the claim text.