Quantum well semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorsToshiro Hayakawa, Kohsei Takahashi, Takahiro Suyama, Masafumi Kondo, Saburo Yamamoto
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Abstract
A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 .ANG. to 150 .ANG..
Claims2
In a semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure, said superlatticed structure is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0<x<1) layers, each of said layers having a thickness of five molecular layers or less and each of said quantum well regions having a thickness in the range of 100 .ANG. to 150 .ANG..
Dependencies are inferred from the claim text.