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US 4,786,814 AGranted
Method of reducing electrostatic charge on ion-implanted devices
AssigneeGeneral Electric Company
InventorsFrank Kolondra, Chung P. Wu
Life of this patent
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Abstract
Disclosed herein is a method of using an apparatus for ion implanation providing a flood of electrons to neutralize the charge on an ion-implanted wafer after implantation to prevent electrostatic sticking attraction between the wafer and the support mechanism.
Claims4
A method of reducing residual electrostatic charge on an ion-implanted wafer comprising the steps of:
- (a) implanting said wafer with a predetermined dose of ions in the range of to 10.sup.10 to 10.sup.14 ions/cm.sup.2 ;
- and
- (b) subsequent to implanting said wafer flooding said wafer for one to three seconds with sufficient secondary electrons to neutralize positive charges on said wafer.
Dependencies are inferred from the claim text.