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US 4,786,615 AGranted
Method for improved surface planarity in selective epitaxial silicon
AssigneeMotorola, Inc.
InventorsHang M. Liaw, Ha T.-T. Nguyen
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Abstract
A method for growing selective epitaxial silicon by chemical vapor deposition resulting in a substantially planar surface by growing superimposed silicon layers at temperatures above and below a transition point.
Claims5
A method for improved surface planarity in selective epitaxial silicon growth comprising the steps of:
- providing a substrate with a mask having at least one aperture;
- growing two superimposed layers of selective epitaxial silicon in the aperture at two different temperature separated by a transition point while substantially avoiding indiscriminate growth of silicon on the mask;
- one of said layers being grown at a temperature lower than the transition point;
- the other one of said two layers being grown at a temperature higher than the transition point;
- and
- terminating the growth of selective epitaxial silicon when the selective epitaxial silicon is substantially planar with the mask.
3 more elements
A method for improved surface planarity in selectively epitaxial silicon growth comprising the steps of:
- providing a substrate with a mask having at least one aperture;
- growing two superimposed layers of epitaxial silicon in the aperture at two different temperatures separated by a transition point while substantially avoiding indiscriminate growth of silicon on the mask;
- one of said two layers being grown by chemical vapor deposition at a temperature where the rate determining step is the transport of adsorbed silicon;
- the other one of said two layers being grown by chemical vapor deposition at a temperature where the rate determining step involves the transport of silicon containing gases through a boundary layer;
- and terminating the growth of selective epitaxial silicon when the selective epitaxial silicon is substantially planar with the mask.
2 more elements
A method for improved surface planarity in selective epitaxial silicon growth comprising the steps of:
- growing at least two superimposed layers of epitaxial silicon by using at least two different temperatures in a silicon containing gas selected from any of the following;
- SiCl.sub.4, SiH.sub.2 Cl.sub.2, SiH.sub.4, SiHCl.sub.3 ;
- and
- said layers being selectively grown in an aperture of a mask, while substantially avoiding deposition on the mask;
- and terminating the growth of selective epitaxial silicon when the selective eptaxial silicon is substantially planar with the mask.
2 more elements
Dependencies are inferred from the claim text.