Plasma enhanced chemical vapor deposited vertical silicon nitride resistor

A process for fabricating an integrated circuit resistor, comprised of silicon-enriched silicon nitride, between two conductive regions which are separated by an insulative layer, comprising the steps of:

• forming a first conductive region on a substrate;
• forming a first insulative layer on said first conductive region;
• opening a window in said first insulative layer;
• forming a semi-insulative film, comprised of silicon-enriched silicon nitride having a mixture of silane, nitrogen and ammonia and formed by a plasma enhanced chemical vapor deposition technique in said window, said film contacting said first conductive region;
• forming a second conductive region on said film;
• whereby a silicon-enriched silicon nitride resistor element is fabricated between said conductive regions.

A process for fabricating a silicon-enriched silicon nitride resistor in a semiconductor device, comprising the steps of:

• forming a first conductive layer on a substrate;
• forming a first insulative layer on said first conductive layer;
• opening a window in said first insulative layer;
• forming a film of silicon-enriched silicon nitride in said window, said silicon-rich silicon nitride film being deposited in said window using a plasma enhanced chemical vapor deposition technique, said silicon-rich silicon nitride film contacting said first conductive layer;
• forming a second conductive layer on said silicon-rich silicon nitride film, said second conductive layer contacting said silicon-rich silicon nitride film.

A process for fabricating a silicon-enriched silicon nitride integrated circuit resistor comprising the steps of:

• growing a gate-oxide layer on a substrate;
• removing a portion of said gate-oxide layer to expose said substrate;
• forming a polysilicon layer on said gate-oxide and said portion of exposed substrate;
• doping said polysilicon layer by phosphorus diffusion wherein a buried contact region is formed in said portion of exposed substrate;
• forming a layer of tungsten-silicon on said polysilicon layer;
• growing an oxide layer on said tungsten-silicon layer;
• forming an insulative layer on said oxide layer;
• opening a window in said insulative layer and said oxide layer, wherein said opening extends to said tungsten-silicon layer;
• forming a film of silicon-enriched silicon nitride in said window, said silicon-enriched silicon nitride film being deposited in said window using a plasma enhanced chemical vapor deposition technique, said silicon-enriched silicon nitride film contacting said tungsten-silicon layer;
• forming a conductive layer on said silicon-enriched silicon nitride film, said conductive layer having a titanium layer and an aluminum-silicon layer.