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US 4,786,607 AGranted
Method for manufacturing a semiconductor device free from current leakage through a semiconductor layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShumpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi
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Abstract
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.
Claims6
A method of manufacturing a semiconductor device comprising:
- forming a first electrode on a substrate;
- forming a rectifying semiconductor layer on said electrode;
- applying a photocurable resin over said semiconductor layer to fill defects of said semiconductor layer with said resin;
- irradiating said photocurable resin to render portions of said resin inside said defect insoluble and the remaining portion soluble to a solvent;
- removing said soluble portion of said resin with said solvent;
- forming a second electrode on said semiconductor layer;
- and
- burning out any remaining defects forming short-current paths by applying a reverse voltage between said first and second electrodes less than the breakdown voltage of said semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.