Layered light receiving member for electrophotography comprising buffer layer
AssigneeCanon Kabushiki Kaisha
InventorsHiroshi Amada, Tetsuya Takei, Naoko Shirai
Life of this patent
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Abstract
The improvements in the light receiving members in which an aluminum material being used as the substrate for use in electrophotography and in other various devices. The improved light receiving member to be provided is characterized in that a buffer layer functioning to improve the bondability between the aluminum substrate and a light receiving layer to be disposed thereon is disposed between the substrate and said light receiving layer. The improved light receiving member is satisfactorily free from various problems due to insufficient bondability between the aluminum substrate and the light receiving layer imposed thereon which are found in the conventional light receiving members.
Claims29
An improved light receiving member including on a substrate constituted principally of aluminum, a buffer layer, a 0.03 to 15 .mu.m thick high resistance intermediate layer and a 1 to 100 .mu.m thick photoconductive layer being disposed in this order from the side of said substrate;
- said buffer layer comprising a non-single-crystal containing silicon atoms and aluminum atoms to improve contact between said substrate and said high resistance intermediate layer;
- said high resistance intermediate layer comprising a non-single-crystal material containing silicon atoms, 10 to 5.times.10.sup.5 atomic ppm of at least one kind of atom selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms, and at least one kind of atom selected from hydrogen atoms and halogen atoms;
- and said photoconductive layer comprising an amorphous material containing silicon atoms as the main constituent and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1 to 40 atomic %.
An improved light receiving member including on a substrate constituted principally of aluminum, a buffer layer, a 0.03 to 15 .mu.m thick charge injection inhibition layer and a 1 to 100 .mu.m thick photoconductive layer being disposed in this order from the side of said substrate;
- said buffer layer comprising a non-single-crystal material containing silicon atoms and aluminum atoms to improve the contact between said substrate and said charge injection inhibition layer;
- said charge injection inhibition layer comprising a material selected from the group consisting of (a) a poly-crystalline material containing silicon atoms as the main constituent, 3 to 5.times.10.sup.4 atomic ppm of an element selected from the group consisting of Group III and V elements of the Periodic Table and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1.times.10.sup.3 to 7.times.10.sup.5 atomic ppm and (b) an amorphous material containing silicon atoms as the main constituent, 3 to 5.times.10.sup.4 atomic ppm of an element selected from the group consisting of Group III and V elements of the Periodic Table and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1.times.10.sup.4 to 6.times.10.sup.5 atomic ppm;
- and said photoconductive layer comprising an amorphous material containing silicon atoms as the main constituent and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1 to 40 atomic %.
An improved light receiving member including on a substrate constituted principally of aluminum, a buffer layer, a 40 .ANG. to 50 .mu.m thick long wavelength light absorption layer and a 1 to 100 .mu.m thick photoconductive layer being disposed in this order from the side of said substrate;
- said buffer layer comprising a non-single-crystal material containing silicon atoms and aluminum atoms to improve the contact between said substrate and said long wavelength light absorption layer;
- said long wavelength light absorption layer comprising a non-single-crystal material containing silicon atoms, at least one kind of atom selected from the group consisting of germanium atoms and tin atoms in a total amount of 1 to 1.times.10.sup.6 atomic ppm and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms;
- and said photoconductive layer comprising an amorphous material containing silicon atoms as the main constituent and at least one kind of atom selected from the group consisting of hydrogen atoms and halogen atoms in a total amount of 1 to 40 atomic %.
Dependencies are inferred from the claim text.