Dry etching process
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Sekine, Haruo Okano, Yasuhiro Horiike
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Abstract
A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.
Claims16
A dry etching process, comprising the steps of:
- placing a workpiece with an etching mask formed on the surface thereof, on a first electrode disposed in a container;
- generating a magnetic field of a closed loop on that side of a second electrode disposed in said container which faces said first electrode, so as to extend said magnetic field from said second electrode to said first electrode, and applying a high frequency power across said first and second electrodes;
- supplying a feed gas containing an etching gas into said container;
- and
- evacuating said container to a set pressure in said container at a level of at least 2.times.10.sup.-4 Torrs and of less than 10.sup.-2 Torrs.
Dependencies are inferred from the claim text.