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US 4,786,359 AGranted
Xenon enhanced plasma etch
AssigneeTegal Corporation
InventorsMark M. Stark, Shu Nakajima, Roger B. Lachenbruch
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Abstract
A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF.sub.3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a parallel plate reactor.
Claims5
A process for etching a silicon wafer comprising the steps of:
- providing a gas mixture comprising CF.sub.3 Br and xenon or krypton;
- contacting said wafer with a plasma formed from said mixture;
- and
- eroding a carbon bearing object with said plasma for at least a portion of the time said plasma contacts said wafer.
1 more element
Dependencies are inferred from the claim text.