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US 4,785,344 AGranted
Semi-conductor component with contact hole
AssigneeSiemens Aktiengesellschaft
InventorGuenther Franz
Life of this patent
Estimating the term…
Abstract
In power MOSFETs the source zone (5) and the channel zone (4) must be contacted by a common contact (15). If the contact material is aluminum and if the channel zone (4) is n-conductive (p-channel MOSFET), a surface region (8) of the channel zone (4) is additionally n-doped through an opening (6) in the source zone (5) thereabove with a dose of .gtoreq.5.times.10.sup.14 atoms cm.sup.-2. The aluminum contact (15) contacts the channel zone (4) at this region (8) thereby forming a purely ohmic contact to the channel zone.
Claims3
A semiconductor component comprising:
- a P-conductive semiconductor body having a first surface;
- an N-conductive first zone embedded in said first surface of said semiconductor body and being of higher conductivity than said semiconductor body;
- a P-conductive second zone embedded in said first zone;
- an oxide layer on said first surface of said semiconductor body and having a first opening therein, said opening exposing a part of a surface of said second zone;
- said second zone having a second opening therein providing an exposed surface area of said first zone beneath said second opening;
- an N-conductive layer having an implantation dose of at least 5.times.10 (EXP14) CM EXP (-2) embedded in said exposed surface area of said first zone, thereby providing a layer having a higher conductivity than said first zone;
- and
- an aluminum contact electrically connecting the exposed surface of said second zone and said N-conductive layer.
5 more elements
Dependencies are inferred from the claim text.