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US 4,785,189 AGranted
Method and apparatus for low-energy scanning electron beam lithography
AssigneeInternational Business Machines Corporation
InventorOliver C. Wells
Life of this patent
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Abstract
An electron sensitive surface is patternized treated to a high resolution pattern of low-energy electrons without any need to do focussing by emitting the low-energy electrons from a pointed electrode and positioning the apex of the pointed electron emitting source suitably close to the surface being treated.
Claims10
A lithographic apparatus for exposure of an electron-sensitive resist layer by low energy electrons, said apparatus comprising:
- a workpiece spaced from a pointed electrode,
- an electron-sensitive resist layer having a thickness of at least about 10 nm located on said workpiece, said resist layer facing said pointed electrode,
- electron exposure means for providing low energy electrons to chemically modify selected areas of said resist layer to create a pattern of exposed regions therein, said electron means including:
- a pointed electrode the apex of which points towards said electron-sensitive resist layer,
- means for providing a flow of electrons having energies less than 1000 eV from said pointed electrode to said electron-sensitive resist layer,
- means for scanning said pointed electrode with respect to said workpiece, and
- means for positioning said pointed electrode a distance from said electron-sensitive resist layer not exceeding 1000 nm.
4 more elements
Dependencies are inferred from the claim text.