Post-oxidation anneal of silicon dioxide
AssigneeInternational Business Machines Corporation
InventorsKarl Hofmann, Gary W. Rubloff, Donald R. Young
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Abstract
The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10.sup.-6 torr to about 10 torr during annealing temperatures of about 500.degree. C. to about 1200.degree. C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.
Claims14
A process for enhancing the insulating and stability characteristics of SiO.sub.2 insulator for a field-effect transistor semiconductor device which comprises providing a silicon dioxide layer on a substrate, and then annealing;
- wherein the annealing includes providing an ambient containing gaseous oxygen-containing species is at least one member selected from the group consisting of oxygen, ozone, nitrous oxide, and hydrogen peroxide to provide a partial pressure from said oxygen-containing species of about 10.sup.-6 torr to about 2.times.10.sup.-2 torr during annealing temperatures of about 600.degree. C. to about 1100.degree. C. for a time sufficient to enhance the insulating and stability characteristics of said SiO.sub.2 insulator.
The process of claim 13 wherein the pressure of said annealing is about 1 atmosphere.
Dependencies are inferred from the claim text.