Method for producing a single-crystalline layer
AssigneeFujitsu Limited
InventorJunji Sakurai
Life of this patent
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Abstract
A method of producing a semiconductor device includes the steps of preparing a base body, forming a non-single-crystalline semiconductor layer on the base body, and irradiating the non-single-crystalline semiconductor layer with an energy beam having a strip shaped irradiation region, in such a manner that either the base body or the energy beam is moved in a direction other than a scanning direction of the energy beam.
Claims8
A method of producing a single crystalline layer for use in a semiconductor device including a stage which moves in a first direction and using an energy source emitting an energy beam having a strip shaped irradiation region, said method comprising the steps of:
- (a) preparing a base body;
- (b) forming a non-single crystalline semiconductor layer on the base body;
- (c) irradiating the non-single-crystalline semiconductor layer with the energy beam for melting the non-single crystalline semiconductor layer, the energy source oscillating at a frequency which is approximately ten times greater than the scanning speed of the energy beam and in a horizontal direction which is perpendicular to a scanning direction of the energy beam and being stationary with respect to the first direction;
- and
- (d) recrystallizing the melted non-single crystalline semiconductor layer for forming a single crystalline semiconductor layer as a substrate for the semiconductor device.
A method of producing a single crystalline layer for use in a semiconductor device having a base body on a stage moving in the X-direction and using an energy source emitting an energy beam having a strip shaped irradiation pattern, said method comprising the steps of:
- (a) forming a polycrystalline semiconductor layer on the base body;
- (b) irradiating the polycrystalline semiconductor layer with the energy beam having the strip shaped irradiation pattern for melting the polycrystalline semiconductor layer, the energy source being stationary in the X-direction but oscillating at a frequency which is approximately ten times greater than a scanning speed of the energy beam in the Y-direction;
- and
- (c) recrystallizing the melted polycrystalline semiconductor layer for forming a single crystalline semiconductor layer.
A method of producing a single crystalline layer for use in a semiconductor device having a semiconductor substrate placed on a stage and an insulating layer formed on the semiconductor substrate and using an energy source emitting a strip shaped beam, said method comprising the steps of:
- (a) forming a polycrystalline silicon layer on the insulating layer;
- and
- (b) irradiating the polycrystalline silicon with the strip shaped energy beam scanned in a first direction to form a single crystalline region, including the substep of:
- (i) oscillating the stage having the semiconductor substrate thereon in a second direction which is perpendicular in a horizontal direction to the first direction of the strip shaped energy beam.
Dependencies are inferred from the claim text.