PIN photodiode formed from an amorphous semiconductor
AssigneeThomson-CSF
InventorYves Henri
Life of this patent
Estimating the term…
Abstract
The invention provides a PIN photodiode in which at least one of the P, I, N layers is formed by a composition multi-layer including undoped superimposed layers of amorphous semiconductor and undoped insulator. In one embodiment, the P and N layers are formed by an amorphous multi-layer, with five periods for the P layer and nine periods for the N layer, and the I layer is formed from an amorphous semiconductor.
Claims15
A PIN photodiode formed from an amorphous semiconductor, having an intrinsic semiconductor zone sandwiched between two outer zones, wherein at least one of said two outer zones is formed by a multilayer composition comprising undoped alternate layers of an amorphous semiconductor and an insulator, the other zones of the diode being formed with amorphous semiconductor.
A PIN photodiode comprising P-type and N-type outer zones bounding an intrinsic inner zone, characterized in that at least one of the two outer zones comprises a multilayer including a plurality of successive periods, each period including a layer of an undoped amorphous semiconductor contiguous to a layer of an undoped amorphous insulator, and any remaining zones being of an amorphous semiconductor.
Dependencies are inferred from the claim text.