High heat conductive insulated substrate and method of manufacturing the same
AssigneeKanegafuchi Kagaku Kogyo Kabushiki Kaisha
InventorsKenji Yamamoto, Takehisa Nakayama, Yoshihisa Tawada
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Abstract
An insulated substrate having high thermal conductivity comprising a substrate having a thermal conductivity of not less than 50 W/m.k., and an insulating layer having high thermal conductivity coated on the substrate; and a method of producing the insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing a magnetic field parallel to the surface of the substrate. The insulated substrate has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation can be prevented.
Claims61
An insulated substrate having high thermal conductivity, comprising a metal substrate having a heat conductivity of not less than 50 W/m.k., and at least one insulating layer having a high thermal conductivity coated on the substrate, wherein said insulating layer has a thermal conductivity of not less than 50 W/m.k. and is selected from the group consisting of hard carbon material containing 0.01 to 20 atomic % of at least one element of group IVA deposited on the metal substrate by a plasma method or ion deposition method.
An insulated substrate having high thermal conductivity, comprising a substrate having a thermal conductivity of not less than 50 W/m.k., and a multi-layer insulating film provided on the substrate, wherein said multi-layer insulating film has a thermal conductivity of not less than 50 W/m.k. and comprises a layer of at least one material selected from the group consisting of diamond and diamond-like carbon and a layer of silicon carbide.
The insulated substrate of any one of claims 12, 51 and 52, wherein the electrical conductivity of the insulating layer is not more than 10.sup.-6 .OMEGA..sup.-1 cm.sup.-1.
An insulated substrate having high thermal conductivity, comprising a substrate having a heat conductivity of not less than 50 W/m.k., and at least one insulating layer having a high thermal conductivity, wherein an interlayer comprising a metal or an amorphous material having a small coefficient of thermal expansion is provided on at least a portion of the substrate, and the insulating layer is provided on said interlayer, said insulating layer having a thermal conductivity of not less than 50 W/m.k. and being selected from the group consisting of (1) hard carbon material selected from the group consisting of diamond, diamond-like carbon, silicon carbide and germanium carbide;
- (2) silicon-containing non single crystalline material selected from the group consisting of silicon carbide, silicon nitride, silicon germanium, silicon germanium carbide, and silicon carbide oxide;
- (3) cubic BN;
- (4) hexagonal BN;
- (5) AlN;
- and (6) BP, wherein said hard carbon material contains 0.01 to 20 atomic % of at least one element of group IVA, and said non single crystalline silicon carbide contains not more than 30 atomic % of at least one element selected from the group consisting of hydrogen and elements of the halogen group.
Dependencies are inferred from the claim text.