Process for the photochemical vapor deposition of siloxane polymers
AssigneeHughes Aircraft Company
InventorsRichard N. Leyden, James T. Hall
Life of this patent
Estimating the term…
Loading patent…
AssigneeHughes Aircraft Company
InventorsRichard N. Leyden, James T. Hall
Estimating the term…
A process for forming on the surface of a substrate a layer of a siloxane polymer by exposing the substrate to a first vapor phase monomer precursor having the formula SiR.sub.x H.sub.4-x where x is 1 to 4 and R is alkyl or phenyl, and a second vapor phase oxygen-containing precursor in the presence of radiation of a predetermined wavelength to bring about the reaction to form the siloxane polymer which deposits on the surface of substrate. The monomer precursor may comprise a mixture, such as SiRH.sub.3 and SiR.sub.2 H.sub.2 with each other or with SiR.sub.3 H. By varying the composition of such mixtures, the composition of the siloxane polymer may be chosen to provide predetermined properties, and, further, may be varied throughout the thickness of the deposited layer.
A low-temperature, charge-free process for forming on the surface of a substrate a layer of a siloxane polymer comprising exposing the substrate at 30.degree. C. to 200.degree. C. to a first vapor reactant comprising the monomer precursor having the formula SiR.sub.x H.sub.4-x where x is 1 to 4 and R is selected from the group consisting of alkyl and phenyl, and a second vapor phase reactant comprising a chosen oxygen-containing precursor in the presence of radiation of a predetermined wavelength to bring about the formation of neutral atomic oxygen from said second vapor phase reactant and the reaction of said atomic oxygen with said first vapor phase reactant to form said siloxane polymer which deposits on said surface of said substrate in a manner which avoids damage to said substrate due to bombardment by charged particles or radiation or exposure to elevated temperature.
Dependencies are inferred from the claim text.