Method of manufacturing structured epitaxial layers on a substrate
AssigneeU.S. Philips Corporation
InventorsVolker Doormann, Jens-Peter Krumme
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Abstract
A method of manufacturing structured epitaxial layers is discribed having monocrystalline layer regions adjacent to layer regions of a different order situated on a monocrystalline substrate whose crystal lattice is disturbed in locally bounded surface regions. A lattice disorder is formed with, the layers being manufactured by means of RF cathode sputtering (sputter epitaxy) in an inert gas plasma, and making use of a target containing the elements which contribute in the form of phases with an almost identical sputtering rate to the formation of the layer.
Claims10
A method of manufacturing structured epitaxial layers comprising
- forming at least one lattice disorder at locally bounded surface regions of a monocrystalline substrate, and
- forming epitaxial layer regions on said substrate by RF cathode sputtering in an inert gas plasma by using a target containing elements contributing to formation of said layer regions, said layer regions being formed in phases with an almost identical sputtering rate.
Dependencies are inferred from the claim text.