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US 4,774,554 AGranted
Semiconductor devices employing Ti-doped Group III-V epitaxial layer
AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsAndrew G. Dentai, Charles H. Joyner, Jr.
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Abstract
High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
Claims14
A semiconductor device comprising an active region for conducting current and means for constraining said current to flow substantially in said active region, said semiconductor device characterized in that
- said constraining means comprises an epitaxially grown, Ti-doped, Group III-V based layer in contact with at least a first predetermined portion of said active region and said layer exhibits a resistivity exceeding 10.sup.3 .OMEGA.-cm.
A light emitting device comprising
- an InP body,
- a heterostructure including InP and InGaAsP layers and in a limited area thereof an active region which is responsive to pumping current to generate optical radiation,
- electrode means for applying said pumping current to said device, and
- means for constraining said pumping current to flow in a channel through said active region,
- characterized in that
- said constraining means comprises a high resistivity Ti-doped InP-based epitaxially grown layer formed on said body.
3 more elements
A light emitting device comprising
- a heterostructure of InP and InGaAsP layers formed in the shape of an elongated mesa bounded on opposite sides by channels and including an active layer which is responsive to pumping current to generate optical radiation,
- electrode means for applying said pumping current to said device, and
- means within said channels for constraining said pumping current to flow through said mesa,
- characterized in that
- said constraining mans comprises a high resistivity Ti-doped InP-based epitaxially grown layer formed in said channels.
2 more elements
Dependencies are inferred from the claim text.