US 4,768,076 A · Recrystallized CMOS with different crystal planes

Abstract

A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation. At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.

Claims12

Dependent claims

A semiconductor device comprising:

a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane;
an insulating film formed on said first substantially flat surface;
a semiconductor layer, which is deposited on said insulating film and recrystallized by laser irradiation, and which has a second substantially flat surface lying substantially parallel to a (110) plane;
and
source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

06/774,705Filed 11 Sep 1985

Priority

JP 59-19154214 Sep 1984

Granted

30 Aug 1988

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 62/405
Crystalline structures: orientations of crystalline planes
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 84/8311
Of only insulated-gate FETs [IGFET]: the IGFETs characterised by having different channel structures
H10D 84/856
Complementary IGFETs, e.g. CMOS: the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Recrystallized CMOS with different crystal planes

Life of this patent

Recrystallized CMOS with different crystal planes

Life of this patent

Abstract

Claims12