Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency
AssigneeCanon Kabushiki Kaisha
InventorsKatsumi Nakagawa, Toshiyuki Komatsu, Yoshiyuki Osada, Satoshi Omata, Yutaka Hirai, Takashi Nakagiri
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Abstract
A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
Claims20
A semiconductor device which comprises a semiconductor layer of a polycrystalline silicon film containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the ( 220) plane is 30% or more based on the total orientation strength, wherein said polycrystalline silicon film consists essentially of crystal grains having an average particle size of 200 .ANG. or larger and contains hydrogen atoms in an amount of 0.01-3 atomic %.
A semiconductor device which comprises:
- a substrate,
- a semiconductor layer of a polycrystalline silicon film formed on the substrate and containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen atoms, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the (220) plane is 30% or more based on the total orientation strength,
- a drain region and source region formed on the surface of the semiconductor layer,
- an insulating layer provided between the drain and source regions,
- a gate electrode provided on the insulating layer,
- a source electrode in electrical contact with the source region, and
- a drain electrode in electrical contact with the drain region.
Dependencies are inferred from the claim text.