Chemical vapor deposition of zinc oxide films and products
AssigneeAtlantic Richfield Company
InventorsPantham S. Vijayakumar, Kimberly A. Blaker, Robert D. Wieting, Boon Wong, Arvind T. Halani
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Abstract
Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.
Claims25
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an insert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200.degree. C. to deposit a zinc oxide film having a resistivity of less than about 2.5.times.10.sup.-3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 150.degree. C. to deposit a zinc oxide film having a resistivity of less than about 2.5.times.10.sup.-3 ohm-centimeter and a thickness of up to about 2 microns on the substrate in the absence of plasma-enhanced deposition.
A process for depositing a zinc oxide film containing a group III element on a substrate, which comprises introducing an organozinc compound vapor, water vapor, a volatile compound of a group III element and an inert carrier gas into a chamber containing a substrate heated to a temperature of about 100.degree. C. to 200.degree. C. to deposit a zinc oxide film having a resistivity of less than about 2.5.times.10.sup.-3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
A process for depositing a zinc oxide film containing boron on a substrate, which comprises introducing:
- (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200.degree. C. to deposit a zinc oxide film having a resistivity of less than about 2.5.times.10.sup.-3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition, the water being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborane being introduced in an amount of about one to four mole percent of the organozinc compound.
A zinc oxide film having a resistivity of less than 2.5.times.10.sup.-3 ohm-centimeter and which is characterized by having been deposited on a substrate by the introduction of an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200.degree. C. to deposit the film on the substrate in the absence of plasma-enhanced deposition.
A zinc oxide film having a resistivity of less than 2.5.times.10.sup.-3 ohm-centimeter and a thickness of up to 2 microns, and which is characterized by having been deposited on a substrate by the introduction of:
- (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing the substrate heated to a temperature of up to about 200.degree. C. in the absence of plasma-enhanced deposition, the water vapor being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborance being introduced in an amount of about one to four mole percent of the organozinc compound.
Dependencies are inferred from the claim text.