Reduction-reoxidation type semiconductor ceramic capacitor and method of manufacturing thereof

Abstract

A reduction-reoxidation type semiconductor ceramic capacitor according to the first invention includes: semiconductor ceramic; a reoxidated dielectric layer formed on the surface of the semiconductor ceramic; at least a pair of electrodes formed on the reoxidated dielectric layer; one of the electrodes being formed with an electrical conductor containing one kind or more of metals or metal compounds selected from Zn, Al, Ni, and Sn; one kind or more of metals in extremely small quantities selected from the metals being diffused into the interior of a portion, in contact with said electrode, of the reoxidated dielectric layer. In addition, a method of manufacturing of the reduction-reoxidation type semiconductor ceramic capacitor comprising the steps of: rendering the semiconductor ceramic to a heat treatment at temperature of from 950.degree. to 1200.degree. C. to thereby form the reoxidated dielectric layer; providing an electrode material layer containing one kind or more of metals or metal compounds selected from Zn, Al, Ni and Sn on a portion forming one of said electrodes; and baking said electrode material layer so provided at temperature of from 600.degree. to 850.degree. C. to thereby form the electrode.

Dependencies are inferred from the claim text.