Coupling device between a metal wave guide, a dielectric wave guide and a semiconductor component and a mixer using this coupling device
AssigneeThomson-CSF
InventorYves Letron
Life of this patent
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Abstract
The invention provides a coupling device between a metal wave guide (three dimensional system) and an electronic signal processing circuit (two dimensional system). The transition is provided by means of a dielectric wave guide introduced longitudinally into the metal wave guide. A chamfer cut in the dielectric guide concentrates the energy of the input signal on a face of the dielectric bar, at the interface with another dielectric material (isolated image guide). At this interface, a microstrip line transmits the energy to a semiconductor component.
Claims9
A coupling device between a metal wave guide and a semiconductor component for processing an ultra high frequency input signal inputted via said waveguide, comprising a dielectric wave guide of "isolated image" type, comprising a bar of a first dielectric material having a permittivity .epsilon..sub.1 forming , with a surface of a second dielectric material of permittivity .epsilon..sub.2, an interface at the level of which is propagated a part of the energy of the signal channelled by the dielectric bar, said dielectric bar including opposed ends, one of which is non-chamfered and overlies said second dielectric material and the other of which is introduced longitudinally into the metal wave guide and zone formed by a chamfer, of length 10 .lambda..sub.g, wherein .lambda..sub.g =guided wave length, cut in the dielectric bar, the energy of the signal being coupled to the semiconductor component by means of a microstrip line which forms a transition zone between the dielectric guide and the semiconductor component, at the level of the interface between the two dielectric materials.
A mixer between an ultra high frequency input signal and a local oscillator signal, injected into a metal wave guide, including a coupling device between the metal wave guide and a mixing diode for processing the ultra high frequency input signal, wherein a dielectric wave guide, of "isolated image" type, comprises a dielectric bar having a permittivity .epsilon..sub.1 forming, with a surface of another dielectric material of permittivity .epsilon..sub.2, an interface at the level of which is propagated a part of the energy of the signal channeled by the dielectric bar, said dielectric bar being introduced longitudinally into the metal wave guide and having a metal guide-dielectric guide transition zone formed by a chamfer, of length 10 .lambda..sub.g, where .lambda..sub.g =guided wave length, cut in the dielectric bar, the energy of the signal being coupled to the mixing diode by means of a microstrip matching line which forms a transition zone between the dielectric guide and the mixing diode, at the level of the interface between the dielectric bar and the dielectric material, wherein the microstrip matching line includes a plurality of wide metallizations forming capacities and a plurality of narrow metallizations forming self inductances, the assembly of the metallizations and of the diode being supported on a common substrate whose rear face is metallized so as to form the capacities and the ground plane, the intermediate frequency output of the mixer being collected from a coaxial connector soldered to the microstrip matching line, the mixing diode being further biased continuously through the connector.
Dependencies are inferred from the claim text.