Composition for semiconductor porcelain, and semiconductor porcelain and capacitor by use of same
AssigneesCanon Kabushiki Kaisha, Nippon Oil and Fats Co., Ltd.
InventorsMotoo Kumagai, Masato Nagano, Michiaki Sakaguchi
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Abstract
A composition for semiconductor porcelain comprisies: (a) 35.5 to 70 mol % of MgTiO.sub.3, (b) 26.5 to 61 mol % of BaTiO.sub.3, (c) a grain boundary improver, and (d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table.
Claims16
A composition for semiconductor porcelain comprising:
- (a) 35.5 to 70 mol % of MgTiO.sub.3,
- (b) 26.5 to 61 mol % of BaTiO.sub.3,
- (c) a grain boundary improver, and
- (d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table.
A semiconductor porcelain comprising a large number of semiconductive crystal grains, each comprising
- (a) 35.5 to 70 mol % of MgTiO.sub.3,
- (b) 26 5 to 61 mol % of BaTiO.sub.3,
- (c) a grain boundary improver, and
- (d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group v of the periodic table, and an insulator region formed at the crystal grain bounderies.
A capacitor comprising a pair of electrodes and a layer sandwiched between these electrodes, said layer comprising a large number of semiconductive crystal grains, each comprising
- (a) 35.5 to 70 mol % of MgTiO.sub.3,
- (b) 26.5 to 61 mol % of BaTiO.sub.3,
- (c) a grain boundary improver, and
- (d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table, and an insulator region formed at the crystal grain boundaries.
Dependencies are inferred from the claim text.