Electrostatic binary switching and memory devices
AssigneeBos-Knox, Ltd.
InventorsGeorge R. Simpson, Herbert W. Sullivan
Life of this patent
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Abstract
Arrays of electrostatic elements arranged in columns and rows are used for switching purposes and for memory devices. Electrostatically attracted members, for each element, when actuated, complete a capacitance device to render that element capable of retaining a charge. Whether or not the element is a capacitance device is sensed by a high frequency signal. Permanent memories can be made by substitution of a pattern of conductor areas for the attractable members. The attractable members, when attracted, form a capacitance switching device or matrix of switches.
Claims12
A method of operating a memory device, the device comprising an array of electrostatically actuated binary elements electrically connected in columns and rows, each element comprising an electrostatically attractable element having at least a conductive surface and a stator member having plural electrode regions, said attractable member, when actuated, overlying said stator member and being separated therefrom by a dielectric material, the method comprising the steps of:
- (a) actuating a selected element of the array by providing an electrical potential to electrode regions of that element to thereby electrostatically attract the attractable member to overlie the stator member,
- (b) ascertaining whether an element has been actuated by directing a signal to one of the electrode regions of that element, and
- (c) sensing the presence of said signal by connecting a signal sensor to another electrode region of that element, the signal being capable of being sensed only when the attractable member of that element capacitatively couples said electrode regions.
A memory device comprising an array of electrostatically actuated binary elements electrically connected in columns and rows, each element comprising an electrostatically attractable element having at least a conductive surface and a stator member having plural electrode regions, said attractable member, when actuated, overlying said stator member and being separated therefrom by a dielectric material to thereby be capable of acting as a capacitive memory element, and means for detecting the capacitances of the elements, whereby the capacitances of each element of the array collectively indicate the information stored in the memory.
A memory device comprising an array of elements electrically connected in columns and rows, each element in the array having at least first and second electrode regions and a memory electrode area, the first electrode region of each element in a column of the array being connected together and to an input lead for that column, the second electrode region of each element in a row of the array being connected together and to an input lead for that row, the first and second electrode regions of each element being separated by a dielectric material from the memory electrode area for that element, and means for electrically detecting the presence or absence of conductive material overlying the memory electrode area.
A binary device comprising;
- an array of electrostatically actuated binary elements, each element comprising a stator member, an electrostatically attractable member, and a plurality of electrode regions which, when energized, electrostatically attract the attractable member toward the stator member, a first electrode region of each binary element being connected in a primary array of rows and columns, a second electrode region of each binary element being connected in a first switching array of rows and columns, and a third electrode region of each binary element being connected in a second switching array of rows and columns, each element being actuated in the primary array by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located,
- the drive voltage for the column of the primary array being controlled by the first switching array of binary elements, each region of the first switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the region is located, and
- the drive voltage for the row of the primary array being controlled by the second switching array of binary elements, each element of the second switching array being actuated by the concurrence of a drive voltage for the column with a drive voltage for the row at the intersection of which the second switching array element is located.
Dependencies are inferred from the claim text.