Charge pump circuit for driving N-channel MOS transistors
AssigneeSos Microelettronica S.p.A.
InventorsCarlo Cini, Claudio Diazzi, Domenico Rossi
Life of this patent
Estimating the term…
Loading patent…
AssigneeSos Microelettronica S.p.A.
InventorsCarlo Cini, Claudio Diazzi, Domenico Rossi
Estimating the term…
This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.
A charge pump circuit for driving N-channel MOS transistors, for connection to a N-channel MOS transistor having a drain electrode connected to a supply voltage line, a source electrode connected to a load and a gate electrode, comprising a capacitor connected with a first terminal thereof to a reference voltage line through a first switch element and with a second terminal thereof to a switching section arranged between said supply voltage line and a ground line and being controlled so as to alternately and selectively connecting said second terminal of said capacitor to said supply voltage line and to said ground line, said first terminal of said capacitor being further connected to said gate electrode of said N-channel MOS transistor.
Dependencies are inferred from the claim text.