Semiconductor device
AssigneeHitachi, Ltd.
InventorsFusaji Shoji, Akihiro Kenmotsu, Isao Obara, Hitoshi Yokono, Takeshi Komaru
Life of this patent
Estimating the term…
Abstract
A semiconductor device containing an .alpha.-rays shielding resin layer on at least active portion of a semiconductor element, said .alpha.-rays shielding resin being a special polyimide resin, is excellent in thermal resistance at the time of sealing the semiconductor element, adhesion of the .alpha.-rays shielding layer to the semiconductor element, and .alpha.-rays shielding ability.
Claims12
In a semiconductor device comprising a semiconductor element at least an active portion of which is coated with an .alpha.-rays shielding resin layer, and a package encapsulating said semiconductor element, the improvement wherein the resin for the .alpha.-ray shielding resin layer is a polyimide resin formed by dropping or spin coating a varnish of a precursor of the polyimide resin containing an aprotic polar solvent on the active portion and heating the varnish, the resin being at least one member selected from the group consisting of a polyimide resin having the repeating unit of the formula:
- ##STR35## and a polyimide resin having the repeating unit of the formulae:
- ##STR36## wherein R is ##STR37##
Dependencies are inferred from the claim text.