Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors

A method of fabricating a semiconductor device including a bipolar transistor, comprising the steps of:

• forming a layered structure of a desired pattern on a main surface of a single crystal semiconductor layer of one conductivity type, the structure having a side wall which defines said pattern and including a lower layer disposed at a lower level, a first insulating layer disposed at an intermediate level, and a first polycrystalline semiconductor layer heavily doped with n-type impurity and disposed at a higher level;
• forming a second insulating layer on the side wall of the layered structure;
• forming a second polycrystalline semiconductor layer on exposed surfaces of said single crystal semiconductor layer, said layered structure and said second insulating layer;
• diffusing said n-type impurity in said first polycrystalline semiconductor layer of the layered structure into part of said second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer;
• selectively etching away said part of the second polycrystalline semiconductor layer diffused with said n-type impurity and said first polycrystalline semiconductor layer;
• selectively converting an outer surface part of said second polycrystalline semiconductor layer into an insulating material, thereby forming a third insulating layer;
• removing said first insulating layer and said conductive layer, using said third insulating layer as a mask, to expose said single crystal semiconductor layer;
• and
• forming a third polycrystalline semiconductor layer doped with impurity of a conductivity type opposite to said one conductivity type, on at least said exposed semiconductor layer.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a first insulating layer locally on a main surface of a semiconductor layer of a first conductivity type so that the first insulating layer is embedded in the semiconductor layer;
• forming a second insulating layer on that area of the main surface of the semiconductor layer which is surrounded by the first insulating layer;
• forming a first semiconductor region of a second conductivity type in that portion of the semiconductor layer which is surrounded by the first insulating layer;
• forming a three-layer film over a limited portion of the first semiconductor layer through a patterning process, the three-layer film being made up of a bottom layer which is a first conductive layer, an intermediate layer which is a third insulating layer and a top layer which is a first polycrystalline semiconductor layer doped highly with an N-type impurity;
• forming a fourth insulating layer on the side wall of the three-layer film, the fourth insulating layer having a predetermined width in a lateral direction;
• exposing a surface area of the first semiconductor region other than that surface area thereof which is covered by the three-layer film and the fourth insulating layer;
• forming a second polycrystalline semiconductor layer on the whole surface;
• carrying out heat treatment to diffuse the N-type impurity of the first polycrystalline semiconductor layer into that region of the second polycrystalline semiconductor layer which is contiguous to the first polycrystalline semiconductor layer;
• etching off the whole of the first polycrystalline semiconductor layer and that region of the second polycrystalline semiconductor layer, in which the N-type impurity has been diffused;
• carrying out pattern processing for the second polycrystalline semiconductor layer so that the second polycrystalline semiconductor layer exists only between the fourth insulating layer and a surface area of the first insulating layer;
• converting the surface of the second polycrystalline semiconductor layer into a fifth insulating layer while using the third insulating layer as a mask;
• implanting ions into the second polycrystalline semiconductor layer through the fifth insulating layer and carrying out heat treatment, to cause the second polycrystalline semiconductor layer to have the second conductivity type and to form a highly-doped semiconductor region of the second conductivity type in that portion of the first semiconductor region which is kept in contact with the second polycrystalline semiconductor layer, the highly-doped semiconductor region being higher in the concentration of an impurity for determining the second conductivity type than the first semiconductor region;
• selectively removing the third insulating layer;
• removing at least a portion of the first conductive layer other than that portion thereof which exists in close proximity to the fourth insulating layer;
• removing the second insulating layer to expose the first semiconductor region;
• forming a third polycrystalline semiconductor layer on the whole surface;
• implanting ions into the third polycrystalline semiconductor layer and carrying out heat treatment, to cause the third polycrystalline semiconductor layer to have the first conductivity type and to form a second semiconductor region of the first conductivity type in that portion of the first semiconductor region which is kept in contact with the third polycrystalline semiconductor layer;
• carrying out pattern processing for the third polycrystalline semiconductor layer so that the third polycrystalline semiconductor layer covers the second semiconductor region and is extended to the surface of the fifth insulating layer;
• forming a first electrode so that the first electrode is kept in contact with that portion of the second polycrystalline semiconductor layer which exists on the first insulating layer;
• and
• forming a second electrode so that the second electrode is kept in contact with the third polycrystalline semiconductor layer, thereby obtaining a semiconductor device formed of a bipolar transistor, in which the semiconductor layer, the first semiconductor region, the second semiconductor region, the first electrode and the second electrode are used as a collector region, a base region, an emitter region, a base electrode and an emitter electrode, respectively.

A method of fabricating a semiconductor device including an insulated gate field effect transistor, comprising the steps of:

• forming a layered structure of a desired pattern on a main surface of a single crystal semiconductor layer of one conductivity type, the structure having side walls which define said pattern and including a conductive layer disposed at a lower level, a first insulating layer disposed at an intermediate level, and a first polycrystalline semiconductor layer heavily doped with n-type impurity and disposed at a higher level;
• forming second insulating layers on the side walls of the layered structure;
• forming a second polycrystalline semiconductor layer on exposed surfaces of said single crystal semiconductor layer, said layered structure and said second insulating layer;
• diffusing said n-type impurity in said first polycrystalline semiconductor layer of the layered structure into part of said second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer;
• selectively etching away said part of the second polycrystalline semiconductor layer diffused with said n-type impurity and said first polycrystalline semiconductor layer;
• doping impurity into remaining portions of said second polycrystalline semiconductor layer and the single crystal semiconductor layer disposed thereunder;
• and
• forming electrical contacts to said conductive layer and said remaining portions of the second polycrystalline semiconductor layer.

A method of fabricating a semiconductor device, comprising the steps of:

• forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type;
• forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a first polycrystalline silicon film doped with one of arsenic and phosphorus;
• forming a first insulating layer on the side wall of the three-layer film;
• forming a second polycrystalline silicon film on the whole surface, and diffusing said one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film;
• selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline silicon film, in which said one of arsenic and phosphorus has been diffused;
• forming a second insulating layer at least on the surface of that portion of the second polycrystalline film which exists on the second semiconductor region;
• removing the silicon nitride film and the conductive film which exist on the second semiconductor region, while using the second insulating layer as a mask, to form an aperture;
• and
• forming a third polycrystalline silicon film so that the aperture is covered by the third polycrystalline silicon film.

A method of fabricating a semiconductor device, comprising the steps of:

• forming layered structures of desired pattern on a main surface of a single crystal semiconductor layer, each of the structures having a side wall which defines said pattern and including a conductive layer disposed at a lower level, a first insulating layer disposed at an intermediate level, and a first polycrystalline semiconductor layer heavily doped with n-type impurity and disposed at a higher level;
• forming a second insulating layer on the side walls of the layered structures;
• forming a second polycrystalline semiconductor layer on exposed surfaces of said single crystal semiconductor layer, said first polycrystalline semiconductor layer of the layered structure and said second insulating layer;
• diffusing said n-type impurity in said first polycrystalline semiconductor layer of each of said layered structures into each part of said second polycrystalline semiconductor layer disposed adjacent thereto;
• selectively etching away the doped parts of said second polycrystalline semiconductor layer and all the first polycrystalline semiconductor layers using said first and second insulating layers as an etching stopper;
• patterning the remaining second polycrystalline semiconductor layer;
• doping the second polycrystalline semiconductor layer with conductivity-affording impurity;
• and
• heat-treating the device to drive the impurity in the second polycrystalline layer into the single crystal semiconductor layer, thereby forming source/drain regions of an insulated-gate field effect transistor and an extrinsic base of a bipolar transistor.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a plurality of first semiconductor regions of a first conductivity type and a plurality of second semiconductor regions of a second conductivity type in a main surface of a single crystal semiconductor layer of the first conductivity type;
• forming a third semiconductor region of the first conductivity type in at least one of said second semiconductor regions;
• forming a three-layer structure of a desired pattern on each of said first and second semiconductor regions, each of said structure having a side wall and including a conductive layer disposed at a lower level, a first insulating layer disposed at an intermediate level, and a first polycrystalline semiconductor layer heavily doped with n-type impurity and disposed at a higher level;
• forming a second insulating layer on the side wall of the three-layer structure;
• forming a second polycrystalline semiconductor layer on exposed surfaces of said single crystal semiconductor layer, said three-layer structure and said second insulating layer;
• diffusing said n-type impurity in said first polycrystalline semiconductor layer into part of said second polycrystalline semiconductor layer disposed thereon;
• selectively etching away the part of said second polycrystalline semiconductor layer diffused with said n-type impurity and said first polycrystalline semiconductor layer;
• selectively converting an outer surface part of said second polycrystalline semiconductor layer at least above said third semiconductor region into an insulating material, thereby forming a third insulating layer;
• removing at least partially said first insulating layer and said conductive layer at least on said third semiconductor region, thereby forming a window;
• and
• forming a third polycrystalline semiconductor layer adjacent to said third semiconductor region to cover at least said window.