In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTsuneo Mitsuyu, Osamu Yamazaki
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Abstract
The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.
Claims17
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of at least one kind of mercury, cadmium, and zinc and an element of at least one kind of sulfur, selenium, and tellurium is being deposited onto a substrate under vacuum, said method comprising the step of:
- simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen at least a part of which are ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which are ionized.
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of group II and an element of group VI is being deposited onto a substrate under vacuum, said method comprising the step of:
- simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen or phosphorus or arsenic at least a part of which were ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which were ionized.
Dependencies are inferred from the claim text.