Process for fabricating solid-state imaging device

A process for fabricating a solid-state imaging device that comprises a semiconductor substrate having arranged thereon, in the stated order, a circuit for scanning a plurality of pixels, a photoconductive film and a transparent electrode layer, said plurality of pixels being defined by a plurality of electrodes on said semiconductor substrate and said transparent electrode layer, said process comprising the steps of:

• forming an electrode layer over said semiconductor substrate for providing said plurality of electrodes;
• forming said photoconductive film over said electrode layer;
• forming a first transparent electrode layer over said photoconductive film;
• forming a resist pattern on said first transparent electrode layer that corresponds to said plurality of pixels;
• etching said first transparent electrode layer and said photoconductive film according to said resist pattern so as to spatially isolate adjacent pixels in said first transparent electrode layer and said photoconductive film;
• isolating adjacent pixels in said electrode layer by etching, according to said resist pattern, that part of said electrode layer on which are disposed said first transparent electrode layer and said photoconductive film between isolated pixels;
• covering a space between adjacent isolated pixels with a passivation film;
• depositing a second transparent electrode layer over said first transparent electrode layer and said passivation film;
• and
• providing a light-shielding layer in that area of said second transparent electrode layer which corresponds to spaces between adjacent isolated pixels.

A process for fabricating a solid-state imaging device that comprises a semiconductor substrate having arranged thereon, in the stated order, a circuit for scanning a plurality of pixels, a photoconductive film and a transparent electrode layer, said plurality of pixels being defined by a plurality of electrodes on said semiconductor substrate and said transparent electrode layer, said process comprising the steps of:

• forming an electrode layer over said semiconductor substrate for providing said plurality of electrodes;
• forming a photoconductive film over said electrode layer;
• forming a first transparent electrode layer over said photoconductive film;
• photolithographically separating said electrode layer, said photoconductive film and said first transparent electrode layer to provide regions corresponding to said plurality of pixels;
• depositing an interlevel insulation film over the separated first transparent electrode layer and isolation regions between adjacent pixels;
• photolithographically forming holes in selected areas of said interlevel insulation film that correspond to said plurality of pixels;
• forming a second transparent electrode layer over said interlevel insulation film with holes and that portion of said first transparent electrode layer which is exposed in said holes;
• and
• forming a light-shielding metal layer in that area of said second transparent electrode layer which corresponds to isolation regions between adjacent pixels.