Sample surface structure measuring method
AssigneeHitachi, Ltd.
InventorsMakoto Kato, Tetsuo Yokoyama, Jyuntaro Arima, Shimbu Yamagata, Mikihiko Oi, Toshihiro Furuya
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Abstract
A sample surface structure measuring method using a scanning type electron microscope featured by scanning the sample surface by an electron beam incident from above the sample surface; measuring the amount of the secondary electrons discharged according to the three-dimensional structure of the sample surface by the scanning; and determining the three-dimensional structure of the sample surface from the amount of the secondary electrons measured based on a relation existing between the predetermined three-dimensional structure and the amount of the secondary electrons discharged.
Claims3
A side-etching amount measuring method for a scanning type electron microscope comprising the step of measuring a side-etching amount from a width of a bright band observed when an electron beam is applied from above a resist, using a relation between a side-etching amount actually measured for a cut sample beforehand and the width of the bright band.
A sample surface groove depth measuring method using a SEM comprising the steps of:
- measuring the brightness f.sub.A on the outside of a groove and the brightness f.sub.B at the center of the groove in an image of a SEM;
- measuring the width L of the groove on the basis of the image of the SEM;
- obtaining the depth d of the groove from an equation;
- ##EQU6##
A side-etching amount measuring method using a SEM comprising the steps of:
- measuring the width l of a bright band observed in an image of a SEM when an electron beam is applied from above a resist on a sample to be measured;
- obtaining an amount x of side-etching in the sample from an equation x=al+b, where a and b are constants determined by the relation between the amounts x of side-etching and the widths l of the bright bands actually measured with cut samples beforehand.
Dependencies are inferred from the claim text.