Method of forming alignment marks in sapphire
AssigneeGeneral Electric Company
InventorGeorge L. Schnable
Life of this patent
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Abstract
Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050.degree. to 1200.degree. C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.
Claims7
A process for producing indicia in a sapphire substrate comprising ion implanting a portion of the substrate with a dosage of silicon ions sufficient to contrast the implanted portion from the remainder of the substrate.
Dependencies are inferred from the claim text.