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US 4,732,833 AGranted
Electrophotographic photoreceptor comprising amorphous silicon and para microcrystalline silicon
AssigneeKabushiki Kaisha Toshiba
InventorShuji Yoshizawa
Life of this patent
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Abstract
A barrier layer of amorphous silicon carbide is formed on aluminum drum, and a photoconductive layer formed of a mixture of para-.mu.c-Si and a-Si is formed on the surface of the barrier layer. An a-Si surface layer is formed on the photoconductive layer. When the electrophotographic photoreceptor is exposed to a light ray, carriers are generated by the ray, which is visible or has a near-infrared wavelength, due to a smaller energy gap of the para-.mu.c-Si in the layer.
Claims15
An electrophotographic photoreceptor, comprising
- a substrate, and
- a photoconductive layer supported on said substrate, said photoconductive layer containing amorphous silicon and para microcrystalline silicon.
An electrophotographic photoreceptor, comprising
- a substrate,
- a photoconductive layer located above said substrate, said photoconductove layer containing an amorphous silicon and para microcrystalline, and
- a barrier layer formed between said substrate and said photoconductive layer, for suppressing a flow of charges between said substrate and said photoconductive layer.
An electrophotographic photoreceptor, comprising
- a substrate,
- a photoconductive layer located above said substrate, said photoconductive layer containing amorphous silicon and para microcrystalline silicon,
- a barrier layer formed between said substrate and said photoconductive layer for suppressing a flow of charges between said substrate and said photoconductive layer, and
- a surface layer formed over said photoconductive layer.
1 more element
Dependencies are inferred from the claim text.