Apparatus and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMituo Kobayashi, Osamu Usuda, Yoshihiko Sano, Koichiro Atsumi
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AssigneeKabushiki Kaisha Toshiba
InventorsMituo Kobayashi, Osamu Usuda, Yoshihiko Sano, Koichiro Atsumi
Estimating the term…
A lead frame is conveyed along a convey direction in a convey path filled with a reducing gas. A semiconductor pellet is placed on the lead frame at a die bonding portion. A bonding wire made of copper or a copper alloy is supplied to the next wire bonding portion. The lower end of the bonding wire is melted with an oxyhydrogen torch surrounded by an air curtain, thereby forming a ball. The bonding wire is guided into the convey path by a capillary. The ball is thermocompressed to an electrode pad of the semiconductor pellet. The other end of the bonding wire is fused and thermocompressed against the outer lead of the lead frame at a postbonding portion. The bonding wire is thus looped between the semiconductor pellet and the outer lead.
An apparatus for manufacturing a semiconductor device, wherein a bonding wire of copper or copper alloy is looped between an electrode pad of a semiconductor element and and an outer lead of a lead frame, comprising:
An apparatus for manufacturing a semiconductor device, wherein a bonding wire of copper or copper alloy is looped between an electrode pad of a semiconductor element and an outer lead of a lead frame, comprising:
An apparatus for manufacturing a semiconductor device, wherein a bonding wire formed of copper or a copper alloy is bonded onto an electrode pad of a semiconductor element, comprising:
A bonding method comprising the steps of:
Dependencies are inferred from the claim text.