Magnetoresistive memory including thin film storage cells having tapered ends

A ferromagnetic thin film based digital memory, said memory comprising:

• a first storage line structure having a first storage line pair of end terminals adapted to conduct electrical current in at least one direction, said storage line end terminals having electrically connected in series therebetween a plurality of bit structures with each bit structure electrically connected at a bit juncture to at least one other said bit structure, each said bit structure comprising an intermediate layer of a kind of separating material having two major surfaces on opposite sides thereof and a memory film on each of said intermediate layer major surfaces with said memory film being of a magnetoresistive, anisotropic magnetic material where said memory film is narrowed in extend near where said bit structure is electrically connected to a bit juncture, as aforesaid, with respect to its extent at centralized portions of said bit structure located farther from any said bit junctures, and
• a plurality of word line structures each having a pair of word line end terminals adapted to conduct electrical current in at least one direction, each of said pairs of word line end terminals having an electrical conductor electrically connected therebetween which is located across an electrical insulating layer from said memory film on one of said major surfaces of said intermediate layer at said centralized regions of a selected one of said bit structures.