Method of making a semiconductor laser by continuous liquid phase epitaxy with out-diffusion from one or more adjacent layers
AssigneeU.S. Philips Corporation
InventorTheodorus G. J. Van Oirschot
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Abstract
A method of making a semiconductor device for producing or amplifying electromagnetic radiation, more particularly a semiconductor laser, has a substrate which has a mesashaped raised portion. On either side of the mesa there is located a blocking layer of a conductivity type opposite to that of the substrate. On the blocking layer are formed a first passive layer of the same conductivity type as the substrate, an active layer and a second passive layer of a conductivity type opposite to that of the substrate. According to the invention, the blocking layer also extends over the mesa, which is connected by diffusion from at least the first passive layer to the blocking layer.
Claims5
A method of manufacturing a semiconductor device, which comprises:
- providing a highly doped semiconductor substrate of a first conductivity type;
- etching said substrate to form a substantially planar surface with at least one strip-shaped raised portion thereon;
- growing a semiconductor blocking layer of a second, opposite conductivity type on said surface and said raised portion;
- growing a passive semiconductor layer of the first conductivity type on said blocking layer;
- growing a thin active semiconductor layer on said passive layer;
- growing a passive semiconductor layer of the second conductivity type on said active layer, the steps of growing the blocking layer, the active layer and the two passive layers being conducted substantially continuously;
- and
- forming a diffused zone of the first conductivity type which connects the passive layer of the first conductivity type to said raised portion by diffusing dopant from said passive semiconductor layer of the first conductivity type into said blocking layer.
Dependencies are inferred from the claim text.