Method of manufacturing a memory cell for a dynamic type random access memory

A method of manufacturing a memory cell for a dynamic type random access memory, comprising:

• a first step of forming at least one well region of a first conductivity type in the surface of a semiconductor substrate;
• a second step of forming a field insulating layer surrounding part of a surface of said well region, as an element region;
• a third step of forming a groove in the surface of said well region;
• a fourth step of forming a capacitor electrode insulatively on the surface of said well region corresponding to said groove;
• a fifth step of forming a covering layer on said capacitor electrode;
• a sixth step of doping a predetermined amount of an impurity of the second conductivity type into the surface of said well region, with the use of said field insulating layer and covering layer as masks, so that said well region has a reduced carrier density in the vicinity of the impurity-doped surface, said predetermined amount of said impurity being in a range in which the conductivity type of said well region is not changed during manufacture;
• a seventh step of forming a gate electrode insulatively on the impurity-doped surface of said well region;
• and
• an eighth step of forming source and drain regions of the second conductivity type in the impurity-doped surface of said well region.