Method for selective intermixing of layered structures composed of thin solid films
AssigneeAmoco Corporation
InventorsJohn D. Ralston, Anthony L. Moretti, Ravinder K. Jain
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Abstract
A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. This intermixing is accomplished by employing irradiation with a pulsed or rapidly scanned laser or electron beam. In addition,the intermixing can be accomplised by multiple pulses from the laser or electron beam so as to increase the degree of intermixing, thereby obtaining a more complete mixing.
Claims18
A method for selective intermixing of a multilayer structure, commonly known as a compositional superlattice, formed by a plurality of alternating layers of two different semiconducting materials, such that one set of layers, known as the quantum-well layers, is composed of a semiconductor material of smaller energy band gap, and the other set of layers, known as the barrier layers, is composed of a semiconductor material of larger band gap, to obtain laterally and/or vertically isolated regions, said regions exhibiting optical and electronic properties different than those of the alloy generated by intermixing said quantum-well layers and said barrier layers, said method comprising the steps of:
- providing a compositional superlattice;
- and
- irradiating said compositional superlattice with an energy source to selectively intermix the quantum-well layers and the barrier layers in said compositional superlattice.
A method for selective intermixing of a multilayer structure originally consisting of two or more thin separate layers of at least two distinct materials to obtain laterally and/or vertically isolated regions exhibiting physical properties different than said multilayer structure, said method comprising the steps of:
- providing a multilayer structure;
- and
- irradiating said multilayer structure with a transient or pulsed energy source so as to selectively intermix the separate layers within said multilayer structure.
A method for selective intermixing of a two layer structure, commonly known as a single heterostructure, in which the first thin layer is composed of one semiconductor material, and the second thin layer is deposited over said first layer and is composed of another semiconductor material of different band gap than said first layer, to obtain laterally and/or vertically isolated regions, said regions exhibiting optical and electronic properties different than those of the alloy generated by intermixing said two semiconductor layers, said method comprising the steps of:
- providing a single heterostructure;
- and
- irradiating said single heterostructure with a pulsed or rapidly scanned laser beam or electron beam, or suitable combinations thereof to selectively intermix the two semiconductor layers in said single heterostructure.
A method for selective intermixing of a three layer semiconductor structure, commonly known as a double heterostructure, in which the middle layer is composed of a semiconductor material of energy band gap different than that of the two surrounding semiconductor layers, to obtain laterally and/or vertically isolated regions, said regions exhibiting optical and electronic properties different than those of the alloy generated by intermixing said three semiconductor layers, said method comprising the steps of:
- providing a double heterostructure;
- and
- irradiating said double heterostructure with an energy source to selectively intermix the three semiconductor layers in said double heterostructure.
A method for selective intermixing of a multilayer structure, commonly known as a doping superlattice, formed by the introduction of different impurity atoms into alternating layers of one semiconducting material, to obtain laterally and/or vertically integrated regions, said regions exhibiting optical and electronic properties different than those of the alloy generated by intermixing said layers, said method comprising the steps of:
- providing a doping superlattice;
- and
- irradiating said doping superlattice with an energy source to selectively intermix the layers in said doping superlattice.
Dependencies are inferred from the claim text.