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AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsDavid T. Ekholm, William H. Grodkiewicz, Bertram Schwartz, Shobha Singh, LeGrand G. Van Uitert, George J. Zydzik
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A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.
A process for fabricating a device comrising the step of depositing a glass target material on at least a part of a semiconductor surface by a particle beam procedure so that the semiconductor surface is at least partially covered with a contacting glass material region in which the glass material region comprises at least one mole percent P.sub.2 O.sub.5 and at least 60 mole percent SiO.sub.2 and the glass material is prepared by a procedure comprising the steps of:
A device comprising a surface at least partially coated with a phosphosilicate glass layer, said layer fabricated by electron beam deposition from a phosphosilicate glass target material characterized in that the phosphosilicate glass target material used in the electron beam deposition procedure is prepared by a procedure comprising the steps of
Dependencies are inferred from the claim text.