Gas-phase growth process and an apparatus for the same
AssigneeApplied Materials Japan, Inc.
InventorsKazuo Maeda, Noboru Tokumasu, Toshihiko Fukuyama, Tsugiaki Hirata
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Abstract
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
Claims22
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate, which comprises:
- flowing a reaction gas over the surface of said substrate in parallel with said surface;
- flowing an inert gas over the flow of said reaction gas so as to create a laminar flow with the flow of said reaction gas;
- preheating both gases to about the same temperature, so as to induce a surface reaction of the reaction gas;
- and growing a film onto the substrate, said process being conducted in the absence of a reaction chamber and with generally a complete particle generation suppression.
A gas-phase growth process for growing films of uniform thickness or having a pattern form or growing films sequentially onto a substrate, which comprises:
- flowing a reaction gas over the surface of said substrate in parallel with said surface;
- flowing an inert gas over the flow of said reaction gas so as to create a laminar flow with the flow of said reaction gas;
- directing UV light over the inert gas toward the surface of the substrate and irradiating said surface to effect photo excitation of said reaction gas;
- preheating both gases to about the same temperatures, to induce a surface reaction of the reaction gas by the energy of said UV light;
- and
- growing a film onto the substrate, said process being conducted in the absence of a reaction chamber and with almost a complete particle generation supression.
A gas-phase growth apparatus for growing films of uniform thickness or having a pattern form or growing films sequentially onto a substrate, which comprises:
- reaction-gas supply nozzles for flowing a reaction gas over the surface of said substrate in parallel with said surface;
- inert-gas supply nozzles for flowing an inert gas over the flow of said reaction gas so as to create a laminar flow with the flow of said reaction gas;
- and
- a heating means serving to preheat both gases to about the same temperature, said apparatus further characterized as not being comprised of a reaction chamber.
A gas-phase growth apparatus for growing films of uniform thickness or having a pattern form or growing films sequentially onto a substrate, which comprises:
- reaction-gas supply nozzles for flowing a reaction gas over the surface of said substrate in parallel with said surface;
- and
- inert-gas supply nozzles for flowing an inert gas over the flow of said reaction gas so as to create a laminar flow with the flow of said reaction gas;
- an UV-irradiation source serving to irradiate UV light onto said surface of the substrate;
- and
- a heating means serving to preheat both gases to almost the same temperature, to induce a surface reaction of the reaction gas with the energy of said UV light, said apparatus further characterized as not being comprised of a reaction chamber.
Dependencies are inferred from the claim text.